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| (R) BAR63J PIN DIODE FEATURES AND BENEFITS n n n Pin diode for high speed switching of RF signal Low forward voltage Very low capacitance A DESCRIPTION Single pin diode in SOD-323 package. This diode is intended to be used in mobile phone to switch the RF signal. SOD-323 35 K ABSOLUTE RATINGS (limiting values) Symbol VR IF Ptot Tstg Tj TL Parameter Continuous reverse voltage Continuous forward current Power Dissipation Storage temperature range Maximum junction temperature Maximum temperature for soldering Ts < 55C Value 50 100 250 - 65 to +150 150 260 Unit V mA mW C C C THERMAL RESISTANCE Symbol Rth (j-a) Parameter Junction to ambient (see note 1) Value 550 Unit C/W Note 1: Epoxy board with recommended pad layout. April 2003 - Ed: 2B 1/4 BAR63J STATIC ELECTRICAL CHARACTERISTICS Symbol VF IR VBR Parameter Forward voltage drop Continuous reverse current Reverse avalanche breakdown voltage Tests Conditions Tamb = 25C Tamb = 25C IR = 5 A IF = 100 mA VR = 50 V 50 Min. Typ. 0.95 Max. Unit 1.2 50 V nA V ELECTRICAL CHARACTERISTICS Symbol Ct Parameter Diode capacitance Tests Conditions VR = 0 V VR = 5 V rf Ls trr Forward resistance Series inductance Charge carrier life time IF = 10 mA IR = 10 mA IR = 6 mA IF = 5 mA F = 1 MHz F = 1 MHz F = 100 MHz Min. Typ. 0.4 0.21 1.8 1.8 125 0.3 2 Ohm nH nS Max. Unit pF Fig. 1: Forward current versus ambient temperature (epoxy board with recommended pad layout). IF(mA) 120 Fig. 2: Average forward power dissipation versus average forward current. PF(AV)(mW) 110 100 = 0.1 = 0.05 = 0.2 = 0.5 100 90 80 =1 80 70 60 60 50 40 40 30 20 20 Tamb(C) 0 0 25 50 75 100 125 150 10 0 0 25 50 IF(AV)(mA) 75 100 125 2/4 BAS70-07 Fig. 3: Junction capacitance versus reverse voltage applied (typical values). C(fF) 500 450 400 350 300 250 200 150 100 50 0 0 5 10 15 20 25 30 F=1MHz VOSC=30mVRMS Tj=25C Fig. 4: Forward resistance versus forward current (typical values). RF(W) 10.0 F=100MHz Tj=25C 1.0 VR(V) 0.1 0.1 1.0 IF(mA) 10.0 100.0 Fig. 5: Thermal resistance junction to ambient versus copper surface under each lead (printed circuit board, epoxy FR4, Cu=35m). Rth(j-a)(C/W) 600 Fig. 6: Insertion losses from antenna to receiver at VBIAS = 0V and 2.7V. Aplac 0.00 7.62 User: ST Microelectronics May 31 2002 550 - 7.50 500 - 15.00 450 @900MHz - 22.50 400 SOD package 0.66 14.39 insertion losses dB 350 isolation dB S(mm) 300 0 5 10 15 20 25 30 35 40 45 50 - 30.00 100.000k 1.500G 3.000G f/Hz 4.500G 6.000G SOD 323 0v SOD 323 2.7v Fig. 7: Insertion losses from transceiver to receiver at VBIAS = 0V and 2.7V. Aplac 0.00 7.62 User: ST Microelectronics May 31 2002 Fig. 8: Insertion losses from transceiver to antenna at VBIAS = 0V and 2.7V. Aplac 0.00 7.62 User: ST Microelectronics May 31 2002 - 7.50 - 7.50 - 15.00 - 15.00 @900MHz - 22.50 SOD package - 22.50 @900MHz insertion losses dB isolation dB - 30.00 SOD package 0.88 19.35 isolation dB Vbias 0v isolation dB Vbias 2.7v - 30.00 100.000k 1.500G 3.000G f/Hz 4.500G 19.84 14.97 100.000k 6.000G 1.500G 3.000G f/Hz 4.500G 6.000G SOD 323 0v SOD 323 2.7v SOD 323 0v SOD 323 2.7v 3/4 BAR63J PACKAGE MECHANICAL DATA SOD-323 DIMENSIONS H b E A1 REF. Millimeters Min. Max. 1.17 0 0.25 0.1 1.52 1.11 2.3 0.1 0.1 0.1 0.44 0.25 1.8 1.45 2.7 0.46 0.41 0 Inches Min. Max. 0.046 0.004 0.017 0.01 0.071 0.057 0.106 0.02 0.016 0.01 0.004 0.06 0.044 0.09 0.004 0.004 A A1 D A b c D E H L Q1 c Q1 L MARKING Type BAR63J Marking 35 Package SOD-323 Weight 0.005g Base qty 3000 Delivery mode Tape & reel Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics (c) 2003 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 4/4 |
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